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On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K (2024)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/arftg61196.2024.10661062

Publication URI: http://dx.doi.org/10.1109/arftg61196.2024.10661062

Type: Conference/Paper/Proceeding/Abstract