On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K (2024)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/arftg61196.2024.10661062
Publication URI: http://dx.doi.org/10.1109/arftg61196.2024.10661062
Type: Conference/Paper/Proceeding/Abstract