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Effects of rapid thermal annealing on telecom C-band InAs quantum dots on InP (100) grown by droplet epitaxy (2024)

First Author: Chan C

Attributed to: Quantum and Many Body Physics Enabled by Advanced Semiconductor Nanotechnology funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ad835d

Publication URI: http://dx.doi.org/10.1088/1361-6463/ad835d

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 2