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Structural and optical characteristics of epitaxially grown AlGaAsBi on GaAs for potential application in ultra-low noise avalanche photodiodes (2025)

First Author: Braza V

Attributed to: Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2025.162473

Publication URI: http://dx.doi.org/10.1016/j.apsusc.2025.162473

Type: Journal Article/Review

Parent Publication: Applied Surface Science

ISSN: 0169-4332