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Band tailoring by annealing and current conduction of Co-doped ZnO transparent resistive switching memory (2021)

First Author: Panda D

Attributed to: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1757-899x/1034/1/012140

Publication URI: http://dx.doi.org/10.1088/1757-899x/1034/1/012140

Type: Journal Article/Review

Parent Publication: IOP Conference Series: Materials Science and Engineering

Issue: 1