📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias (2025)

First Author: Huang P

Attributed to: Materials and Devices for Next Generation Internet (MANGI) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2025.3571004

Publication URI: http://dx.doi.org/10.1109/ted.2025.3571004

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 7