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Strain and luminescence properties of hexagonal hillocks in N-polar GaN (2025)

First Author: Bruckbauer J

Attributed to: Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0259840

Publication URI: http://dx.doi.org/10.1063/5.0259840

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 13