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Direct Heteroepitaxy of ß-Ga 2 O 3 on 4H-SiC as a Prospective Foundation for Vertical Power Devices (2025)

First Author: Lane D

Attributed to: Oxide and chalcogenide MOCVD (metal-organic chemical vapour deposition) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.36227/techrxiv.176471837.70477518/v1

Publication URI: http://dx.doi.org/10.36227/techrxiv.176471837.70477518/v1

Type: Preprint