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Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX (2013)

First Author: Yang Y

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2012.2233203

Publication URI: http://dx.doi.org/10.1109/ted.2012.2233203

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 2

ISSN: 0018-9383