Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach (2008)
Attributed to:
Development of high breakdown, high power InP pHEMTS for millimeter wave frequency applications
funded by
STFC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mssp.2008.07.013
Publication URI: http://dx.doi.org/10.1016/j.mssp.2008.07.013
Type: Journal Article/Review
Parent Publication: Materials Science in Semiconductor Processing
Issue: 5-6