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Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to 3 x 10 14 pcm -2 (1999)

First Author: Morgan D
Attributed to:  Supplementary funding to support ST/H001093/2 funded by STFC

Abstract

No abstract provided

Bibliographic Information

Type: Journal Article/Review

Volume: 112

Parent Publication: NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS

Issue: 11

ISSN: 1124-1861