Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire (2012)
Attributed to:
Development of an epitaxial lift-off technique for II-VI semiconductor heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Conference/Paper/Proceeding/Abstract
Volume: 8263
Parent Publication: Proceedings of SPIE