Determination of In Situ Trap Properties in CCDs Using a "Single-Trap Pumping" Technique (2014)
Attributed to:
Simulation and Measurement of Advanced Semiconductor Imaging Sensors
funded by
STFC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tns.2013.2295941
Publication URI: http://dx.doi.org/10.1109/tns.2013.2295941
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Nuclear Science
Issue: 4