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Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping (2013)

First Author: Chambers S

Attributed to: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adma.201301030

PubMed Identifier: 23649872

Publication URI: http://europepmc.org/abstract/MED/23649872

Type: Journal Article/Review

Parent Publication: Advanced Materials

Issue: 29

ISSN: 0935-9648