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Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability (2012)

First Author: Möreke J

Attributed to: Development of an integrated optical E-Probe for GaN power transistor reliability analysis funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201228395

Publication URI: http://dx.doi.org/10.1002/pssa.201228395

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 12