High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN (2008)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200778408
Publication URI: http://dx.doi.org/10.1002/pssc.200778408
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 6