The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer (2008)
Attributed to:
Growth of thick and flat high quality GaN using nano-column compliant layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200778562
Publication URI: http://dx.doi.org/10.1002/pssc.200778562
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 6