The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer (2008)

First Author: Meshi L
Attributed to:  Growth of thick and flat high quality GaN using nano-column compliant layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200778562

Publication URI: http://dx.doi.org/10.1002/pssc.200778562

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 6