📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study (2009)

First Author: Balaz D

Attributed to: Modelling of Carrier Transport in Ultra Thin Body Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200880858

Publication URI: http://dx.doi.org/10.1002/pssc.200880858

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: S2