Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study (2009)
Attributed to:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200880858
Publication URI: http://dx.doi.org/10.1002/pssc.200880858
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: S2