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Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eV (2010)

First Author: Yu K

Attributed to: Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200983430

Publication URI: http://dx.doi.org/10.1002/pssc.200983430

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 7-8