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Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers (2012)

First Author: Novikov S

Attributed to: Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201100297

Publication URI: http://dx.doi.org/10.1002/pssc.201100297

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 3-4