Growth of epitaxial thin films of scandium nitride on 100-oriented silicon (2008)
Attributed to:
Defect reduction in GaN using the in-situ growth of transition metal nitride layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.01.045
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.01.045
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 11