Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content (2009)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.04.010
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.04.010
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 13