A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy (2009)
Attributed to:
Growth of thick and flat high quality GaN using nano-column compliant layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.04.021
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.04.021
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 13