Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiO /TiSiN gate stacks (2010)

First Author: Alatise O
Attributed to:  Platform: Strained Si / SiGe: Materials, Technology and Design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2010.02.002

Publication URI: http://dx.doi.org/10.1016/j.mee.2010.02.002

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 11