A computational study of Si-H bonds as precursors for neutral E ' centres in amorphous silica and at the Si/SiO2 interface (2013)

First Author: Ling S

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2013.03.028

Publication URI: http://dx.doi.org/10.1016/j.mee.2013.03.028

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering