Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition (2013)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2013.03.032
Publication URI: http://dx.doi.org/10.1016/j.mee.2013.03.032
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering