Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition (2013)

First Author: Mather S
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2013.03.032

Publication URI: http://dx.doi.org/10.1016/j.mee.2013.03.032

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering