The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices (2013)
Attributed to:
Modelling of Advanced Functional Materials using Terascale Computing
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2013.03.132
Publication URI: http://dx.doi.org/10.1016/j.mee.2013.03.132
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering