Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy (2013)
Attributed to:
Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mseb.2013.08.011
Publication URI: http://dx.doi.org/10.1016/j.mseb.2013.08.011
Type: Journal Article/Review
Parent Publication: Materials Science and Engineering: B
Issue: 20