The influence of junction depth on short channel effects in vertical sidewall MOSFETs (2008)
Attributed to:
Feasibility of Novel Deca-nanometer vertical MOSFETs for low-cost Radio Frequency Application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2008.03.013
Publication URI: http://dx.doi.org/10.1016/j.sse.2008.03.013
Type: Journal Article/Review
Parent Publication: Solid-State Electronics
Issue: 7