How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications? (2008)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2008.06.051
Publication URI: http://dx.doi.org/10.1016/j.sse.2008.06.051
Type: Journal Article/Review
Parent Publication: Solid-State Electronics
Issue: 12