How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications? (2008)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2008.06.051

Publication URI: http://dx.doi.org/10.1016/j.sse.2008.06.051

Type: Journal Article/Review

Parent Publication: Solid-State Electronics

Issue: 12