1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack (2009)
Attributed to:
Platform: Strained Si / SiGe: Materials, Technology and Design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2009.07.007
Publication URI: http://dx.doi.org/10.1016/j.sse.2009.07.007
Type: Journal Article/Review
Parent Publication: Solid-State Electronics
Issue: 11