The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs (2010)
Attributed to:
Platform: Strained Si / SiGe: Materials, Technology and Design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2009.09.029
Publication URI: http://dx.doi.org/10.1016/j.sse.2009.09.029
Type: Journal Article/Review
Parent Publication: Solid-State Electronics
Issue: 3