The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs (2010)

First Author: Alatise O
Attributed to:  Platform: Strained Si / SiGe: Materials, Technology and Design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.sse.2009.09.029

Publication URI: http://dx.doi.org/10.1016/j.sse.2009.09.029

Type: Journal Article/Review

Parent Publication: Solid-State Electronics

Issue: 3