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Top-gated silicon nanowire transistors in a single fabrication step. (2009)

First Author: Colli A

Attributed to: Device Electronics Based on nanoWires and NanoTubes funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/nn900284b

PubMed Identifier: 19425540

Publication URI: http://europepmc.org/abstract/MED/19425540

Type: Journal Article/Review

Volume: 3

Parent Publication: ACS nano

Issue: 6

ISSN: 1936-0851