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1 µm gate length, In 0.75 Ga 0.25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/µm (2008)

First Author: Hill R

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el:20080470

Publication URI: http://dx.doi.org/10.1049/el:20080470

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 7