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Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm (2010)

First Author: De Valicourt G

Attributed to: Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/iet-opt.2009.0078

Publication URI: http://dx.doi.org/10.1049/iet-opt.2009.0078

Type: Journal Article/Review

Parent Publication: IET Optoelectronics

Issue: 5