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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans (2006)

First Author: Sharp J

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2385215

Publication URI: http://dx.doi.org/10.1063/1.2385215

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 19