Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans (2006)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2385215
Publication URI: http://dx.doi.org/10.1063/1.2385215
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 19