Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC (2007)

First Author: Mahapatra R
Attributed to:  Technologies for SiC electronics and sensors in extreme environments funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2756521

Publication URI: http://dx.doi.org/10.1063/1.2756521

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 2