Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack (2008)
Attributed to:
Technologies for SiC electronics and sensors in extreme environments
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2839314
Publication URI: http://dx.doi.org/10.1063/1.2839314
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 4