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Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers (2008)

First Author: Cherns D

Attributed to: Growth of thick and flat high quality GaN using nano-column compliant layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2899944

Publication URI: http://dx.doi.org/10.1063/1.2899944

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 12