Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC (2008)
Attributed to:
NSF: An investigation into the properties of B12As2, B4C and their heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2940132
Publication URI: http://dx.doi.org/10.1063/1.2940132
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 12