Reverse graded relaxed buffers for high Ge content SiGe virtual substrates (2008)
Attributed to:
Ultimate Control of Strain Relaxation Processes in SiGe Layers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3023068
Publication URI: http://dx.doi.org/10.1063/1.3023068
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 19