Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots (2009)

First Author: Davies S
Attributed to:  Spectroscopy and Applications of Nitride Quantum Dots funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3224897

Publication URI: http://dx.doi.org/10.1063/1.3224897

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10