Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates (2010)

First Author: Shah V
Attributed to:  Ultimate Control of Strain Relaxation Processes in SiGe Layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3311556

Publication URI: http://dx.doi.org/10.1063/1.3311556

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 6