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Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device (2010)

First Author: Gong Y

Attributed to: NSF: An investigation into the properties of B12As2, B4C and their heterostructures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3443712

Publication URI: http://dx.doi.org/10.1063/1.3443712

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 22