Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device (2010)
Attributed to:
NSF: An investigation into the properties of B12As2, B4C and their heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3443712
Publication URI: http://dx.doi.org/10.1063/1.3443712
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 22