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The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices (2010)

First Author: Naidu D

Attributed to: Platform Renewal - Optical gain and recombination in structured materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3471812

Publication URI: http://dx.doi.org/10.1063/1.3471812

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 4