The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices (2010)
Attributed to:
Platform Renewal - Optical gain and recombination in structured materials
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3471812
Publication URI: http://dx.doi.org/10.1063/1.3471812
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 4